InGaAs 56Gbaud PIN & 4x56Gbaud Array PD Chip - OS-PD5016、OS-PD4x5016
1310nm 100G -400G PAM4 PIN PD芯片
Features
Data rate up to 400Gbps
High Responsivity
Low Capacitance
Low Dark Current
Top Illuminated planar structure
Diode on Semi Insulating Substrates
Anode/Cathode Pads on Front Side
Application
IEEE 100-400Gigabit Ethernet
400Gbps CWDM4,PAM4
Specification (Tc=25℃,Single Die)
PARAMETER | SYMBOL | MIN | TYP | MAX | UNIT | TEST CONDITIONS |
Active area diameter | D | 18 | μm | |||
Response range | λ | 900 | 1650 | nm | ||
Responsivity | R | 0.7 | 0.75 | A/W | λ=1310nm | |
0.75 | λ=1550nm | |||||
Dark current | ID | 0.02 | 0.50 | nA | VR=5V | |
Capacitance | C | 0.05 | 0.07 | pF | VR=2V, f=1MHz | |
Bandwidth | Bw | 36.0 | GHz | 3dB down, RL=50Ω | ||
Die size | 250X340 | μm | For Single Die | |||
250X1360 | For 1x4 Array |
2023-08
GaAs 850nm100Gbps PAM4 / 850nm 400Gbps PAM4 1x4 Array PD ChipOS-GaAs5030 / OS-GaAs4x5030FeaturesBandwidthup to 36GHzφ30um active areaLow cap…… [了解更多]
2023-08
GaAs 850nm50Gbps PAM4 / 850nm 200Gbps PAM4 1x4 Array PD ChipOS-GaAs2838 / OS-GaAs4x2838FeaturesBandwidthup to 28GHzφ38um active areaLow capa…… [了解更多]
2023-08
InGaAs 56Gbaud PIN & 4x56Gbaud Array PD Chip - OS-PD5016、OS-PD4x5016 1310nm 100G -400G PAM4 PIN PD芯片,1310nm 100Gbps PAM4 光探測器芯片 & 4x100Gbps…… [了解更多]
2023-08
InGaAs 28Gbaud PIN & 1x4 Array PD Chip - OS-PD2818、OS-PD4x2818 50G -200G PAM4 PIN PD芯片 1310nm 50Gbps PAM4 光探測器芯片 & 4x50Gbps PAM4 光探測器陣列芯片… [了解更多]
2023-08
45um 850nm 25Gbps / 100Gbps GaAs PIN PD Chip Features High data rates up to 25Gbps Resonsiable for 850nm High responsivity Low capacitance L…… [了解更多]
產品應用覆蓋光接入網、5G無線通信、光傳輸網、數據中心、微波光子、量子通信、屏下傳感、HDMI、氣體傳感、紅外成像、激光雷達等領域,并可提供不同響應波長的各種大面積光探測器芯片及一維和二維光探測器陣列芯片等定制服務。
——產品應用覆蓋光接入網、5G無線通信、光傳輸網、數據中心、微波光子、量子通信、屏下傳感、HDMI、氣體傳感、紅外成像、激光雷達等領域,并可提供不同響應波長的各種大面積光探測器芯片及一維和二維光探測器陣列